SiGe微波功率异质结双极晶体管可靠性研究

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) Pub Date : 2000-06-24 DOI:10.1109/HKEDM.2000.904223

Jinshu Zhang, P. Tsien, Pei-yi Chen, L. Nanver, J. Slotboom

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引用次数: 3

摘要

虽然随着外延技术的发展，SiGe异质结双极晶体管的性能得到了很大的提高，但由于其失配较大，在实际应用中其可靠性是一个值得关注的问题。我们对SiGe微波功率异质结双极晶体管进行了加速寿命测试，发现在峰值结温200/spl度/C下，通过正向直流偏置处理HBT 168小时后，SiGe微波功率HBT的性能没有变化。这清楚地表明SiGe HBT具有与Si双极晶体管相同的可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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On the reliability of SiGe microwave power heterojunction bipolar transistor

Although the performance of SiGe heterojunction bipolar transistor has been improved much with the development of epitaxy technology, the reliability is a concern for practical application due to its large mismatch. We have carried out accelerated life test on the SiGe microwave power heterojunction bipolar transistor, and found that the performance of the SiGe microwave power HBT does not change after the HBT is addressed at peak junction temperature of 200/spl deg/C for 168 hrs by forward DC bias. This clearly indicates that the SiGe HBT has the same reliability as Si bipolar transistor.

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Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)

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