三维集成电路布局设计中的缓冲互连

Mohammad A. Ahmed, S. Mohapatra, M. Chrzanowska-Jeske
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引用次数: 4

摘要

设计基于硅通孔(TSV)的3D集成电路的一个非常重要的挑战是,通过物理设计的各个阶段,准确地估计互连延迟,这强烈依赖于3D集成电路的布局。在设计过程中越早越准确;这样才能做出更好的设计决策。在布局设计的早期阶段采用最优的缓冲器插入方法可以显著降低3D电路的延迟和功耗。与2D集成电路不同,3D集成电路中的缓冲区插入需要仔细考虑跨多个器件层互连中的附加设计约束。在本文中,我们提出了一种新的缓冲插入方案,用于三维平面规划中的延迟优化。对于单个三维网络,该算法有效地计算连续缓冲区之间的所需距离(缓冲区插入长度),这取决于网络不可忽略的TSV RC延迟贡献。这种可变缓冲区插入长度的技术在平面规划中使用,可以优化单个3D互连的缓冲区,并将总缓冲区数量减少25%,总功耗减少12%。该方法还包括一种基于TSV位置及其RC延迟的TSV周围缓冲区插入方法。我们的实验表明,所提出的围绕tsv的缓冲区规划方法避免了延迟冲突,并将tsv之间的延迟减少了11%,最大限度地减少了缓冲区的使用。本文还分析了缓冲尺寸和TSV接触电阻等关键参数对三维互连延迟和功耗的影响。
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Buffered interconnects in 3D IC layout design
A very important challenge in designing through-silicon via (TSV)-based 3D ICs is to accurately estimate, through all stages of the physical design, the interconnect delay which is strongly dependent on the layout of 3D IC. The earlier in the design process and more accurate it can be done; the better design decisions can be made. Incorporating an optimal buffer insertion approach in the early layout design stage can significantly minimize delay and power in 3D circuits. Unlike 2D ICs, buffer insertion in 3D ICs needs careful consideration of additional design constraints in interconnects spanning multiple device layers. In this paper, we propose a novel buffer insertion scheme for delay optimization during 3D floorplanning. For individual 3D nets, the algorithm efficiently computes the desired distance between consecutive buffers (buffer insertion length), which depends on the non-negligible TSV RC delay contribution of the net. This technique of variable buffer insertion length, used during floorplanning, allows optimizing buffers for individual 3D interconnects and reduces overall buffer count by up to 25% and total power consumption by up to 12%. The proposed approach also includes a method for buffer insertion around a TSV, based on the TSV location and its RC delay. Our experiments suggest that the proposed method of buffer planning around TSVs avoids delay violation and reduces delay across TSVs up to 11%, minimizing buffer usage. The paper also analyzes the impact of key parameters such as buffer size and TSV contact resistance on the delay and power dissipation in 3D interconnects.
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