V. N. Pavlovskii, E. Lutsenko, A. Danilchyk, V. Zubialevich, A. Muravitskaya, G. P. Yablonskii, H. Kalisch, R. H. Jansen, B. Schineller, M. Heuken
{"title":"InGaN/GaN/Si电致发光异质结构设计和量子阱厚度对其发光和激光性能的影响","authors":"V. N. Pavlovskii, E. Lutsenko, A. Danilchyk, V. Zubialevich, A. Muravitskaya, G. P. Yablonskii, H. Kalisch, R. H. Jansen, B. Schineller, M. Heuken","doi":"10.1109/CAOL.2010.5634186","DOIUrl":null,"url":null,"abstract":"Employing a strain-reducing layer stack between Si substrate and MQW layers as well as optimization of quantum well thicknesses of InGaN/GaN/Si MQW electroluminescent heterostructures led to disappearance of cracks and pinholes, to reduction of the laser threshold down to 75 kW/cm2 at 433 nm under N2 laser emission excitation.","PeriodicalId":254986,"journal":{"name":"2010 International Conference on Advanced Optoelectronics and Lasers","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of InGaN/GaN/Si electroluminescent heterostructure design and quantum well thickness on their luminescent and laser properties\",\"authors\":\"V. N. Pavlovskii, E. Lutsenko, A. Danilchyk, V. Zubialevich, A. Muravitskaya, G. P. Yablonskii, H. Kalisch, R. H. Jansen, B. Schineller, M. Heuken\",\"doi\":\"10.1109/CAOL.2010.5634186\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Employing a strain-reducing layer stack between Si substrate and MQW layers as well as optimization of quantum well thicknesses of InGaN/GaN/Si MQW electroluminescent heterostructures led to disappearance of cracks and pinholes, to reduction of the laser threshold down to 75 kW/cm2 at 433 nm under N2 laser emission excitation.\",\"PeriodicalId\":254986,\"journal\":{\"name\":\"2010 International Conference on Advanced Optoelectronics and Lasers\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-11-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International Conference on Advanced Optoelectronics and Lasers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CAOL.2010.5634186\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Advanced Optoelectronics and Lasers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAOL.2010.5634186","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of InGaN/GaN/Si electroluminescent heterostructure design and quantum well thickness on their luminescent and laser properties
Employing a strain-reducing layer stack between Si substrate and MQW layers as well as optimization of quantum well thicknesses of InGaN/GaN/Si MQW electroluminescent heterostructures led to disappearance of cracks and pinholes, to reduction of the laser threshold down to 75 kW/cm2 at 433 nm under N2 laser emission excitation.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
