{"title":"超小型簧片开关的磁性和机械设计","authors":"T. Kobayashi, K. Hinohara, C. Kawakita","doi":"10.1109/33.142891","DOIUrl":null,"url":null,"abstract":"The miniaturization limit of the reed switch with respect to the magnetic and mechanical properties is discussed assuming that the contact rating, the switching current and voltage, the carry current, and the breakdown voltage are 1 VA, 0.1 A, 24 V, 0.3 A, and 150 V, respectively. Assuming that the contact rating, the switching current and voltage, the carry current, and the breakdown voltage decrease, it was found that the ultraminiature reed switch with glass inner diameter of 1.0 mm and glass inner length of 4.0 mm can be put in mass production by using the existing process technology. This reed switch has a contact force of 1 gf and is suitable in the field of microelectronics.<<ETX>>","PeriodicalId":368900,"journal":{"name":"Electrical Contacts - 1991 Proceedings of the Thirty-Seventh IEEE HOLM Conference on Electrical Contacts","volume":"7 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Magnetic and mechanical design of ultraminiature Reed switches\",\"authors\":\"T. Kobayashi, K. Hinohara, C. Kawakita\",\"doi\":\"10.1109/33.142891\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The miniaturization limit of the reed switch with respect to the magnetic and mechanical properties is discussed assuming that the contact rating, the switching current and voltage, the carry current, and the breakdown voltage are 1 VA, 0.1 A, 24 V, 0.3 A, and 150 V, respectively. Assuming that the contact rating, the switching current and voltage, the carry current, and the breakdown voltage decrease, it was found that the ultraminiature reed switch with glass inner diameter of 1.0 mm and glass inner length of 4.0 mm can be put in mass production by using the existing process technology. This reed switch has a contact force of 1 gf and is suitable in the field of microelectronics.<<ETX>>\",\"PeriodicalId\":368900,\"journal\":{\"name\":\"Electrical Contacts - 1991 Proceedings of the Thirty-Seventh IEEE HOLM Conference on Electrical Contacts\",\"volume\":\"7 2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electrical Contacts - 1991 Proceedings of the Thirty-Seventh IEEE HOLM Conference on Electrical Contacts\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/33.142891\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electrical Contacts - 1991 Proceedings of the Thirty-Seventh IEEE HOLM Conference on Electrical Contacts","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/33.142891","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Magnetic and mechanical design of ultraminiature Reed switches
The miniaturization limit of the reed switch with respect to the magnetic and mechanical properties is discussed assuming that the contact rating, the switching current and voltage, the carry current, and the breakdown voltage are 1 VA, 0.1 A, 24 V, 0.3 A, and 150 V, respectively. Assuming that the contact rating, the switching current and voltage, the carry current, and the breakdown voltage decrease, it was found that the ultraminiature reed switch with glass inner diameter of 1.0 mm and glass inner length of 4.0 mm can be put in mass production by using the existing process technology. This reed switch has a contact force of 1 gf and is suitable in the field of microelectronics.<>