Feng Zhuang, J. Fang, W. Deng, Xiaoyu Ma, Junkai Huang
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引用次数: 0
摘要
本文提出了基于表面电位的非晶In- zn - ga - o薄膜晶体管的电容模型。由于器件特性，考虑了载波简并。基于电荷表模型的对称正交版本，给出了一种新的终端电荷表达式。因此，可以得到电容模型。通过与实测数据和仿真结果的比较，验证了模型的有效性。它对电路模拟器非常有用。
Analytical Capacitance Model for In-Ga-Zn-O Thin-Film Transistors Including Degeneration
In this paper, a capacitance model of amorphous In-Zn-Ga-O thin-film transistors is proposed based on terms of surface potential. The carrier degeneracy is considered due to the device characteristics. Based on the symmetric quadrature version of Charge-Sheet Model, a new expression of terminal charge is provided. Therefore, the capacitance model can be obtained. The validity of the model is verified by comparisons with measured data and simulation results. It is very useful to circuit simulators.
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