重新考察极低浓度下硅中ErOx中心的室温1.54 μιη光致发光

2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-12-29 DOI:10.23919/SNW.2017.8242319

E. Prati, M. Celebrano, L. Ghirardini, P. Biagioni, M. Finazzi, Y. Shimizu, Y. Tu, K. Inoue, Y. Nagai, T. Shinada, Y. Chiba, A. Abdelghafar, M. Yano, T. Tanii

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引用次数: 3

摘要

铒在硅中的发光已经在过去的高功率发射机制中进行了深入的探索，但其用于硅光子学有源元件的可制造性被证明是不可行的。我们探索了极低剂量的ErOx在Si中的室温光致发光(PL)，以获得单光子发射的少光子区。我们通过倒置共聚焦显微镜收集微米级植入点的发射，实现了可计数光子区，并评估了可探测发射中心的下限数目。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Revisiting room-temperature 1.54 μιη photoluminescence of ErOx centers in silicon at extremely low concentration

Luminescence of erbium in silicon has been intensively explored in the past in the high power emission regime, but its employment for manufacturability of active components for silicon photonics proved unfeasible. We explore the room-temperature photoluminescence (PL) at the telecomm wavelength of very low implantation doses of ErOx in Si for accessing few photon regime towards single photon emission. We achieve countable photon regime and we assess the lower-bound number of detectable emission centers by micron scale implanted dots, whose emission is collected by an inverted confocal microscope.

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2017 Silicon Nanoelectronics Workshop (SNW)

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