一种基于电流传送带的宽带降噪CMOS LNA

D. Diaz-Chinea, H. García-Vázquez, M. San Miguel Montesdeoca, S. Khemchandani, J. del Pino
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引用次数: 3

摘要

本文提出了一种基于电流传送带(CC)的宽带CMOS低噪声放大器(LNA),该放大器利用消噪技术消除了输入MOSFET的热噪声。与现有拓扑结构相比,这种新型LNA具有以下显著优势:宽带性能,在0至6.2GHz范围内具有稳定的频率响应,宽带输入匹配阻抗,完全没有无源元件;低噪声系数(NF)和高线性。与其他拓扑的比较证明了新实现的有效性。
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A Wide-band noise-cancelling CMOS LNA based on Current Conveyors
In this paper, a Wide-band CMOS low-noise amplifier (LNA) based on Current Conveyors (CC) is presented, in which the thermal noise of the input MOSFET is cancelled by exploiting a noise-cancelling technique. This new LNA offers the following notable advantages over existing topologies: wideband performance, with a stable frequency response from 0 to 6.2GHz and wideband input matched impedance with a total absence of passive elements; a low Noise Figure (NF) and high linearity. Comparisons with other topologies prove the effectiveness of the new implementation.
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