{"title":"石墨烯作为电子衬底上高质量氮化镓沉积的缓冲层","authors":"Preetpal Singh, Chao-Sung Lai, C. Tan","doi":"10.1109/ISNE.2016.7543408","DOIUrl":null,"url":null,"abstract":"Micro etched graphene is used to reduce the lattice mismatch as well as thermal mismatch between GaN and sapphire. 3 layers of graphene has shown to be more promising candidate as a buffer layer then monolayer graphene in improving the crystal quality of GaN on sapphire.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Graphene as a buffer layer for high quality GaN deposition on substrates in electronics\",\"authors\":\"Preetpal Singh, Chao-Sung Lai, C. Tan\",\"doi\":\"10.1109/ISNE.2016.7543408\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Micro etched graphene is used to reduce the lattice mismatch as well as thermal mismatch between GaN and sapphire. 3 layers of graphene has shown to be more promising candidate as a buffer layer then monolayer graphene in improving the crystal quality of GaN on sapphire.\",\"PeriodicalId\":127324,\"journal\":{\"name\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2016.7543408\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2016.7543408","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Graphene as a buffer layer for high quality GaN deposition on substrates in electronics
Micro etched graphene is used to reduce the lattice mismatch as well as thermal mismatch between GaN and sapphire. 3 layers of graphene has shown to be more promising candidate as a buffer layer then monolayer graphene in improving the crystal quality of GaN on sapphire.
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