{"title":"高功率下实心谐振器可靠性评估研究","authors":"N. B. Hassine, D. Mercier, P. Renaux","doi":"10.1109/RME.2009.5201318","DOIUrl":null,"url":null,"abstract":"This work deals with BAW SMR reliability at high power levels. Experimental methods easy to set up in common RF laboratories are presented and validated. Experimental results concerning frequency shifts versus the dissipated power and the harmonics generation are reported. The main origins of these effects are discussed physically and conclusions in light of the obtained results about the characterization method and the device reliability are drawn.","PeriodicalId":245992,"journal":{"name":"2009 Ph.D. Research in Microelectronics and Electronics","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Solidly mounted resonators under high power study for reliability assessment\",\"authors\":\"N. B. Hassine, D. Mercier, P. Renaux\",\"doi\":\"10.1109/RME.2009.5201318\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work deals with BAW SMR reliability at high power levels. Experimental methods easy to set up in common RF laboratories are presented and validated. Experimental results concerning frequency shifts versus the dissipated power and the harmonics generation are reported. The main origins of these effects are discussed physically and conclusions in light of the obtained results about the characterization method and the device reliability are drawn.\",\"PeriodicalId\":245992,\"journal\":{\"name\":\"2009 Ph.D. Research in Microelectronics and Electronics\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-07-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 Ph.D. Research in Microelectronics and Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RME.2009.5201318\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Ph.D. Research in Microelectronics and Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RME.2009.5201318","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Solidly mounted resonators under high power study for reliability assessment
This work deals with BAW SMR reliability at high power levels. Experimental methods easy to set up in common RF laboratories are presented and validated. Experimental results concerning frequency shifts versus the dissipated power and the harmonics generation are reported. The main origins of these effects are discussed physically and conclusions in light of the obtained results about the characterization method and the device reliability are drawn.
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