Multi BSF layer InGaP/GaAs optimized solar cell

Back Surface Field layer plays an eminent role for both single and multi-junction solar cells for controlling the recombination rate. In this work multi BSF layers are used at both top and bottom cells to get higher efficiency. The work is done taking double junction InGaP/GaAs Solar cell and augmentation of the BSF layers is done using mathematical numerical modelling with Silvaco simulator. The structure, photo-generation rate and thickness of the BSF layers is discussed in this paper. For this improved cell schematic, the enhanced available short circuit current density is 17.35 mA/cm2 which is obtained at an open circuit voltage of 2.69 V, which leads to an augmented transformation efficiency.