94 GHz预调谐模块硅Ikpati二极管研制的新进展

1983 13th European Microwave Conference Pub Date : 1983-09-01 DOI:10.1109/EUMA.1983.333235

M. Heitzmann, M. Boudot

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引用次数: 0

摘要

介绍了低压外延的使用，主要是集成散热器技术的批量工艺，以及极低的感应石英封装，从而提供径向阻抗匹配。本文给出了两种预调谐模块的结果，一种是在铜上，另一种是在金刚石IIa上，连续振荡达到800 mW，效率为10%，结温升为200°C。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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New Progress in a Development of a 94 GHz Pretuned Module Silicon Ikpati Diode

Use of low pressure epitaxy and mainly a batch process for integrated heat sink technology, associated with a very low inductive quartz encapsulation giving a radial impedance match, are described. Results for two types of these pretuned modules, one on copper the other on Diamond IIa, are given for CW oscillations reaching 800 mW with 10 % efficiency and junction temperature rise of 200°C.

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1983 13th European Microwave Conference

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