Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Sungjun Kim, Seongjae Cho, Byung-Gook Park
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Improved Gradual Reset Phenomenon in SiNx-based RRAM by Diode-Connected Structure
In this work, we have confirmed that dependent reset switching phenomenon of SiNx/SiO2 RRAM is dependent on stop voltage (VSTOP) in both DC and pulse operation. In addition, it was confirmed that improved gradual resistance change can be obtained by adjusting the amplitude of the applied reset pulse. By process simulation and empirical modeling of resistance change of the device, it is confirmed that the voltage distribution can be controlled only in the reset operation, resulting in more linear and gradual resistance change phenomenon even though same reset pulse is used.
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