E. Garlid, Q. Hu, C. Geppert, M. Chan, C. Palmstrøm, P. Crowell
{"title":"Fe/InxGa1−xAs异质结构中自旋霍尔效应的电测量","authors":"E. Garlid, Q. Hu, C. Geppert, M. Chan, C. Palmstrøm, P. Crowell","doi":"10.1109/DRC.2011.5994468","DOIUrl":null,"url":null,"abstract":"There has been extensive theoretical discussion of the spin Hall effect (SHE) and the various ways that it could be exploited to generate or manipulate spin currents. However, only a handful of recent experiments have investigated this effect, and in semiconductor materials they have relied on optical techniques to either detect or generate spins [1,2].","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical measurement of the spin Hall effects in Fe/InxGa1−xAs heterostructures\",\"authors\":\"E. Garlid, Q. Hu, C. Geppert, M. Chan, C. Palmstrøm, P. Crowell\",\"doi\":\"10.1109/DRC.2011.5994468\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"There has been extensive theoretical discussion of the spin Hall effect (SHE) and the various ways that it could be exploited to generate or manipulate spin currents. However, only a handful of recent experiments have investigated this effect, and in semiconductor materials they have relied on optical techniques to either detect or generate spins [1,2].\",\"PeriodicalId\":107059,\"journal\":{\"name\":\"69th Device Research Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"69th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2011.5994468\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994468","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical measurement of the spin Hall effects in Fe/InxGa1−xAs heterostructures
There has been extensive theoretical discussion of the spin Hall effect (SHE) and the various ways that it could be exploited to generate or manipulate spin currents. However, only a handful of recent experiments have investigated this effect, and in semiconductor materials they have relied on optical techniques to either detect or generate spins [1,2].