T. Yoshikawa, Akihiro Aoyama, T. Iwata, Kazutoshi Kobayashi
{"title":"用于高通量环境下冷备用系统的LVDS变送器","authors":"T. Yoshikawa, Akihiro Aoyama, T. Iwata, Kazutoshi Kobayashi","doi":"10.1109/radecs47380.2019.9745657","DOIUrl":null,"url":null,"abstract":"A high-bandwidth LVDS Transmitter (TX) has been proposed for redundant parallel connection of semiconductor devices in cold-spare systems. The cold-spare configuration is widely adopted for secure system operation of artificial satellite exposed to highly-radiated environment. For applying to the configuration in radiation hardened application, the LVDS-TX has i) off-chip driver consisting of only NMOS transistors to enhance latch-up immunity, ii) replica biasing for common mode voltage stabilization independently to off-chip loading, iii) multiple guard ring between large NMOS and N-Well areas. The proposed LVDS-TX has been fabricated by using bulk I/O and SOI core transistors in a 65 nm FDSOI process. Measurement results show over-500Mbit/sec stable data communication, and remarkable suppression of BER (Bit Error Rate) degradation compared to commercial device under ${}^{84}\\text{Kr}^{17+}$ exposure of 322.0 MeV at flux of over 5x105 count/cm2/s.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"LVDS Transmitter for Cold-Spare Systems in High Flux Environments\",\"authors\":\"T. Yoshikawa, Akihiro Aoyama, T. Iwata, Kazutoshi Kobayashi\",\"doi\":\"10.1109/radecs47380.2019.9745657\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high-bandwidth LVDS Transmitter (TX) has been proposed for redundant parallel connection of semiconductor devices in cold-spare systems. The cold-spare configuration is widely adopted for secure system operation of artificial satellite exposed to highly-radiated environment. For applying to the configuration in radiation hardened application, the LVDS-TX has i) off-chip driver consisting of only NMOS transistors to enhance latch-up immunity, ii) replica biasing for common mode voltage stabilization independently to off-chip loading, iii) multiple guard ring between large NMOS and N-Well areas. The proposed LVDS-TX has been fabricated by using bulk I/O and SOI core transistors in a 65 nm FDSOI process. Measurement results show over-500Mbit/sec stable data communication, and remarkable suppression of BER (Bit Error Rate) degradation compared to commercial device under ${}^{84}\\\\text{Kr}^{17+}$ exposure of 322.0 MeV at flux of over 5x105 count/cm2/s.\",\"PeriodicalId\":269018,\"journal\":{\"name\":\"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"volume\":\"111 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/radecs47380.2019.9745657\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/radecs47380.2019.9745657","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
LVDS Transmitter for Cold-Spare Systems in High Flux Environments
A high-bandwidth LVDS Transmitter (TX) has been proposed for redundant parallel connection of semiconductor devices in cold-spare systems. The cold-spare configuration is widely adopted for secure system operation of artificial satellite exposed to highly-radiated environment. For applying to the configuration in radiation hardened application, the LVDS-TX has i) off-chip driver consisting of only NMOS transistors to enhance latch-up immunity, ii) replica biasing for common mode voltage stabilization independently to off-chip loading, iii) multiple guard ring between large NMOS and N-Well areas. The proposed LVDS-TX has been fabricated by using bulk I/O and SOI core transistors in a 65 nm FDSOI process. Measurement results show over-500Mbit/sec stable data communication, and remarkable suppression of BER (Bit Error Rate) degradation compared to commercial device under ${}^{84}\text{Kr}^{17+}$ exposure of 322.0 MeV at flux of over 5x105 count/cm2/s.