用于高通量环境下冷备用系统的LVDS变送器

T. Yoshikawa, Akihiro Aoyama, T. Iwata, Kazutoshi Kobayashi
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引用次数: 1

摘要

提出了一种用于冷备系统中半导体器件冗余并联的高带宽LVDS发射机(TX)。为保证高辐射环境下人造卫星系统的安全运行,普遍采用冷备配置。为了应用于辐射强化应用的配置,LVDS-TX具有i)仅由NMOS晶体管组成的片外驱动器,以增强锁存抗扰度;ii)复制偏置,用于独立于片外负载的共模电压稳定;iii)大型NMOS和N-Well区域之间的多个保护环。本文提出的LVDS-TX是在65 nm FDSOI工艺中使用大块I/O和SOI核心晶体管制造的。测量结果表明,在${}^{84}\text{Kr}^{17+}$ 322.0 MeV照射下,在超过5x105计数/cm2/s的通量下,与商用设备相比,数据通信稳定在500mbit /s以上,误码率(BER)下降明显得到抑制。
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LVDS Transmitter for Cold-Spare Systems in High Flux Environments
A high-bandwidth LVDS Transmitter (TX) has been proposed for redundant parallel connection of semiconductor devices in cold-spare systems. The cold-spare configuration is widely adopted for secure system operation of artificial satellite exposed to highly-radiated environment. For applying to the configuration in radiation hardened application, the LVDS-TX has i) off-chip driver consisting of only NMOS transistors to enhance latch-up immunity, ii) replica biasing for common mode voltage stabilization independently to off-chip loading, iii) multiple guard ring between large NMOS and N-Well areas. The proposed LVDS-TX has been fabricated by using bulk I/O and SOI core transistors in a 65 nm FDSOI process. Measurement results show over-500Mbit/sec stable data communication, and remarkable suppression of BER (Bit Error Rate) degradation compared to commercial device under ${}^{84}\text{Kr}^{17+}$ exposure of 322.0 MeV at flux of over 5x105 count/cm2/s.
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