Chin-Te Wang, C. Kuo, Wee-Chin Lim, Li-Han Hsu, H. Hsu, Y. Miyamoto, E. Chang, Szu-Ping Tsai, Y. Chiu
{"title":"An 80 nm In0.7Ga0.3As MHEMT with flip-chip packaging for W-band low noise applications","authors":"Chin-Te Wang, C. Kuo, Wee-Chin Lim, Li-Han Hsu, H. Hsu, Y. Miyamoto, E. Chang, Szu-Ping Tsai, Y. Chiu","doi":"10.1109/ICIPRM.2010.5516317","DOIUrl":null,"url":null,"abstract":"The fabrication process of an 80 nm In<inf>0.7</inf>Ga<inf>0.3</inf>As MHEMT device with flip-chip packaging on Al<inf>2</inf>O<inf>3</inf> substrate is presented. The flip-chip packaged device exhibited good dc characteristics with high I<inf>DS</inf> = 425 mA/mm and high g<inf>m</inf> = 970 mS/mm at V<inf>DS</inf> = 1.5 V. Besides, the RF performances revealed high gain of 10 dB at 50 GHz and low minimum noise figure (NF<inf>min</inf>)below 2 dB at 60 GHz, showing the feasibility of flip-chip packaged In<inf>0.7</inf>Ga<inf>0.3</inf>As MHEMT device for low noise applications at W-band.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2010.5516317","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An 80 nm In0.7Ga0.3As MHEMT with flip-chip packaging for W-band low noise applications
The fabrication process of an 80 nm In0.7Ga0.3As MHEMT device with flip-chip packaging on Al2O3 substrate is presented. The flip-chip packaged device exhibited good dc characteristics with high IDS = 425 mA/mm and high gm = 970 mS/mm at VDS = 1.5 V. Besides, the RF performances revealed high gain of 10 dB at 50 GHz and low minimum noise figure (NFmin)below 2 dB at 60 GHz, showing the feasibility of flip-chip packaged In0.7Ga0.3As MHEMT device for low noise applications at W-band.
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