毫米波InGaAs MOSFET/RTD小波发生器的频率调制

2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI:10.1109/ICIPRM.2013.6562644

M. Egard, M. Arlelid, L. Ohlsson, B. Borg, E. Lind, L. Wernersson

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引用次数: 0

摘要

将InGaAs MOSFET与RTD进行协整以实现小波发生器。利用MOSFET的大跨导特性(1.9 mS/μm)在振荡电路中切换电流，在50 ~ 100ghz的频域内产生低至41ps的相干小波。测量到的最低功耗为1.9 pJ/脉冲。研究发现，电源偏置可以用来调制小波的中心频率。

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Frequency modulation in mm-wave InGaAs MOSFET/RTD wavelet generators

Co-integration of an InGaAs MOSFET and an RTD is performed to realize a wavelet generator. The large transconductance of the MOSFET (1.9 mS/μm) is used to switch the current in an oscillator circuit and coherent wavelets down to 41 ps are generated in the frequency domain of 50 to 100 GHz. The lowest power consumption measured is 1.9 pJ/pulse. It is found that the supply bias can be used to modulate the center frequency of the wavelets.

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2013 International Conference on Indium Phosphide and Related Materials (IPRM)

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