{"title":"使用SuperFlash®memBrain™技术进行内存计算","authors":"Nhan Do, H. Tran, M. Reiten","doi":"10.1109/vlsitechnologyandcir46769.2022.9830145","DOIUrl":null,"url":null,"abstract":"The concept and experimental result of using SuperFlash® based neuromorphic memory to solve the data communication bottlenecks in neural network edge devices are discussed. The implementation of a 2Mb memory array as an analog vector matrix multiplier (VMM) in a 28 nm SuperFlash® eFlash (ESF3-28 nm) process together with design concepts, weight tuning technique, performance factors, and reliability, are also presented in detail.","PeriodicalId":332454,"journal":{"name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Computing-in-Memory with SuperFlash® memBrain™ Technology\",\"authors\":\"Nhan Do, H. Tran, M. Reiten\",\"doi\":\"10.1109/vlsitechnologyandcir46769.2022.9830145\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The concept and experimental result of using SuperFlash® based neuromorphic memory to solve the data communication bottlenecks in neural network edge devices are discussed. The implementation of a 2Mb memory array as an analog vector matrix multiplier (VMM) in a 28 nm SuperFlash® eFlash (ESF3-28 nm) process together with design concepts, weight tuning technique, performance factors, and reliability, are also presented in detail.\",\"PeriodicalId\":332454,\"journal\":{\"name\":\"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830145\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830145","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Computing-in-Memory with SuperFlash® memBrain™ Technology
The concept and experimental result of using SuperFlash® based neuromorphic memory to solve the data communication bottlenecks in neural network edge devices are discussed. The implementation of a 2Mb memory array as an analog vector matrix multiplier (VMM) in a 28 nm SuperFlash® eFlash (ESF3-28 nm) process together with design concepts, weight tuning technique, performance factors, and reliability, are also presented in detail.