Modeling of trapped hole induced MOS device degradation during Fowler-Nordheim stress

Metal-Oxide-Silicon (MOS) device degradation due to trapped holes in the bulk of thin SiO/sub 2/ (22-33 nm) gate oxide during low fluence Fowler-Nordheim (FN) injection from the accumulated <100> n-Si of n/sup +/ polySi gate MOS capacitors has been theoretically modeled. The model is based on tunneling electron initiated band-to-band impact ionization (BTBII) as the possible source of generated holes. The validity of the present analysis has been compared with the experimental data of FN voltage shift /spl Delta/V/sub FN/ of Fazan et al. A comparative study of degradation during constant current and voltage FN stress is also presented.