14.3集成2.3位/单元电阻式RAM和弹性技术的4.7μs关机/唤醒43pJ/Cycle非易失性微控制器

Tony F. Wu, B. Le, R. Radway, Andrew Bartolo, William Hwang, Seung-Kook Jeong, Haitong Li, Pulkit Tandon, E. Vianello, P. Vivet, E. Nowak, Mary Wootters, H. Wong, M. Aly, E. Beigné, S. Mitra
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引用次数: 32

摘要

从物联网(IoT)的边缘节点到大型计算集群,非易失性正在成为广泛应用领域中必不可少的片上存储器特性。片上非易失性存储器(NVM)对于低能耗运行、实时响应、隐私和安全、不可预测环境下的运行和容错至关重要[1]。现有的片上nvm(如Flash、FRAM、EEPROM)存在高读/写能量/延迟、密度和集成方面的挑战[1]。例如,理想的物联网边缘系统将在活动模式之间采用细粒度的时间功率门控(即关闭)。然而,现有的片上闪存可能具有很长的延迟(擦除后写入的延迟> 23 ms),而采样间到达时间可能很短(例如[2]中的2ms)。
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14.3 A 43pJ/Cycle Non-Volatile Microcontroller with 4.7μs Shutdown/Wake-up Integrating 2.3-bit/Cell Resistive RAM and Resilience Techniques
Non-volatility is emerging as an essential on-chip memory characteristic across a wide range of application domains, from edge nodes for the Internet of Things (IoT) to large computing clusters. On-chip non-volatile memory (NVM) is critical for low-energy operation, real-time responses, privacy and security, operation in unpredictable environments, and fault-tolerance [1]. Existing on-chip NVMs (e.g., Flash, FRAM, EEPROM) suffer from high read/write energy/latency, density, and integration challenges [1]. For example, an ideal IoT edge system would employ fine-grained temporal power gating (i.e., shutdown) between active modes. However, existing on-chip Flash can have long latencies (> 23 ms latency for erase followed by write), while inter-sample arrival times can be short (e.g., 2ms in [2]).
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