热光伏应用的苯乙烯化镓薄多晶层的结晶工艺

Ye. O. Bahanov, S. Shutov, V. Tsybulenko, S. Levytskyi
{"title":"热光伏应用的苯乙烯化镓薄多晶层的结晶工艺","authors":"Ye. O. Bahanov, S. Shutov, V. Tsybulenko, S. Levytskyi","doi":"10.15222/tkea2022.4-6.39","DOIUrl":null,"url":null,"abstract":"The cost of thermophotovoltaic converters can be reduced by making substrates of amorphous materials, which do not have an orienting effect, such as glass or fused quartz, for obtaining thin polycrystalline GaSb layers. The study establishes the conditions for the crystallization of thin polycrystalline GaSb layers with grain size sufficient to produce efficient thermophotovoltaic converter structures on a non-orienting substrate made of fused quartz. The authors carry out a two-dimensional modeling of the initial nucleus growth to study how the crystallization conditions affect the shape of the grains. It is shown that the form of grain growth is not very sensitive to the initial nucleus size and cooling rate, but is rather sensitive to nucleus density on the surface. The paper provides an estimate of the average surface density of the new phase nuclei, which tend to grow, on substrate surfaces. When the temperature is increased, the surface concentration of nuclei grows, and the grain size decreases. It is determined that the selected range of grain surface density corresponds to the cultivation temperature range of 450—550°С. Thin polycrystalline GaSb layers are grown at 520°С with a cooling rate of 10°C/ min to a temperature of 400°C, using a method developed by us, which requires simple equipment and consists in the forced cooling of a thin layer of stibium in a gallium melt in a vacuum. The degree of crystallinity of the samples is estimated from the photoluminescence spectra at 77 K. The spectra show two emission bands: one at 796 meV and another, the predominant one, at 775 meV, which indicates the presence of a significant number of point defects and deviations from the stoichiometry of the obtained films.\nThe studies performed on an interference microscope show that the obtained layers have good planarity and homogeneity, and the average grain size is up to 25 microns, which confirms the validity of the proposed models. This technology can be used to manufacture inexpensive infrared radiation converters and, in particular, thermophotovoltaic converters.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Crystallization processes of thin polycrystalline layers of galium stybnide for thermophotovoltaic application\",\"authors\":\"Ye. O. Bahanov, S. Shutov, V. Tsybulenko, S. Levytskyi\",\"doi\":\"10.15222/tkea2022.4-6.39\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The cost of thermophotovoltaic converters can be reduced by making substrates of amorphous materials, which do not have an orienting effect, such as glass or fused quartz, for obtaining thin polycrystalline GaSb layers. The study establishes the conditions for the crystallization of thin polycrystalline GaSb layers with grain size sufficient to produce efficient thermophotovoltaic converter structures on a non-orienting substrate made of fused quartz. The authors carry out a two-dimensional modeling of the initial nucleus growth to study how the crystallization conditions affect the shape of the grains. It is shown that the form of grain growth is not very sensitive to the initial nucleus size and cooling rate, but is rather sensitive to nucleus density on the surface. The paper provides an estimate of the average surface density of the new phase nuclei, which tend to grow, on substrate surfaces. When the temperature is increased, the surface concentration of nuclei grows, and the grain size decreases. It is determined that the selected range of grain surface density corresponds to the cultivation temperature range of 450—550°С. Thin polycrystalline GaSb layers are grown at 520°С with a cooling rate of 10°C/ min to a temperature of 400°C, using a method developed by us, which requires simple equipment and consists in the forced cooling of a thin layer of stibium in a gallium melt in a vacuum. The degree of crystallinity of the samples is estimated from the photoluminescence spectra at 77 K. The spectra show two emission bands: one at 796 meV and another, the predominant one, at 775 meV, which indicates the presence of a significant number of point defects and deviations from the stoichiometry of the obtained films.\\nThe studies performed on an interference microscope show that the obtained layers have good planarity and homogeneity, and the average grain size is up to 25 microns, which confirms the validity of the proposed models. This technology can be used to manufacture inexpensive infrared radiation converters and, in particular, thermophotovoltaic converters.\",\"PeriodicalId\":231412,\"journal\":{\"name\":\"Технология и конструирование в электронной аппаратуре\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Технология и конструирование в электронной аппаратуре\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.15222/tkea2022.4-6.39\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Технология и конструирование в электронной аппаратуре","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.15222/tkea2022.4-6.39","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

热光伏转换器的成本可以通过制造无定形材料来降低,无定形材料没有定向效应,例如玻璃或熔融石英,以获得薄的多晶GaSb层。该研究建立了薄多晶GaSb层的结晶条件,其晶粒尺寸足以在熔融石英制成的无取向衬底上生产高效的热光伏转换器结构。为了研究结晶条件对晶粒形状的影响,作者对初始核生长进行了二维模拟。结果表明,晶粒生长形式对初始核尺寸和冷却速度不敏感,而对表面核密度敏感。本文给出了在衬底表面易于生长的新相核的平均表面密度的估计。随着温度的升高,表面核浓度增大,晶粒尺寸减小。确定了所选择的晶粒表面密度范围对应于培养温度450 ~ 550°С。使用我们开发的方法,在520°С下以10°C/ min的冷却速度生长到400°C的薄多晶GaSb层,该方法需要简单的设备,并且包括在真空中镓熔体中强制冷却薄层锑。样品的结晶度由77 K时的光致发光光谱估计。光谱显示出796 meV和775 meV的两个主要发射带,这表明所得到的薄膜存在大量的点缺陷和化学计量的偏差。在干涉显微镜下进行的研究表明,所得层具有良好的平面度和均匀性,平均晶粒尺寸可达25微米,证实了所提模型的有效性。该技术可用于制造廉价的红外辐射转换器,特别是热光伏转换器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Crystallization processes of thin polycrystalline layers of galium stybnide for thermophotovoltaic application
The cost of thermophotovoltaic converters can be reduced by making substrates of amorphous materials, which do not have an orienting effect, such as glass or fused quartz, for obtaining thin polycrystalline GaSb layers. The study establishes the conditions for the crystallization of thin polycrystalline GaSb layers with grain size sufficient to produce efficient thermophotovoltaic converter structures on a non-orienting substrate made of fused quartz. The authors carry out a two-dimensional modeling of the initial nucleus growth to study how the crystallization conditions affect the shape of the grains. It is shown that the form of grain growth is not very sensitive to the initial nucleus size and cooling rate, but is rather sensitive to nucleus density on the surface. The paper provides an estimate of the average surface density of the new phase nuclei, which tend to grow, on substrate surfaces. When the temperature is increased, the surface concentration of nuclei grows, and the grain size decreases. It is determined that the selected range of grain surface density corresponds to the cultivation temperature range of 450—550°С. Thin polycrystalline GaSb layers are grown at 520°С with a cooling rate of 10°C/ min to a temperature of 400°C, using a method developed by us, which requires simple equipment and consists in the forced cooling of a thin layer of stibium in a gallium melt in a vacuum. The degree of crystallinity of the samples is estimated from the photoluminescence spectra at 77 K. The spectra show two emission bands: one at 796 meV and another, the predominant one, at 775 meV, which indicates the presence of a significant number of point defects and deviations from the stoichiometry of the obtained films. The studies performed on an interference microscope show that the obtained layers have good planarity and homogeneity, and the average grain size is up to 25 microns, which confirms the validity of the proposed models. This technology can be used to manufacture inexpensive infrared radiation converters and, in particular, thermophotovoltaic converters.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Changes in the characteristics of silicon photovoltaic cells of solar arrays after current overloads Electrical conductivity of thermosensitive glass-ceramics based on nanosized vanadium dioxide Resistive humidity sensors based on nanocellulose films for biodegradable electronics Synchronization of pulsed and continuous-wave IMPATT oscillators in the millimeter wavelength range. Part 2. Stabilizing microwave parameters of synchronized generators Matrix calculation of correlation characteristics based on spectral methods
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1