{"title":"铅-锆-钛酸镧中光子带隙波导的模拟","authors":"O. Nordseth, T. Tybell, J. Grepstad","doi":"10.1109/NO.2006.348372","DOIUrl":null,"url":null,"abstract":"Simulations of photonic crystals slabs (PCSs) in thin films of lead-lanthanum zirconate-titanate (PLZT) show band gaps larger than 27 % of the mid-gap frequency for a hexagonal hole-type photonic crystal. The vertical asymmetry caused by the introduction of electrode and buffer layers in a thin film stack, required for epitaxial growth on silicon, does not appreciably affect the photonic crystal properties. Waveguides can be formed in the PCS by removing rows of holes from the crystal lattice. We find that the propagation losses in such waveguide are strongly affected by the thickness and optical attenuation coefficient of the electrode layer, and that the transmission through a 60 degree waveguide bend can be substantially increased by introduction of additional defects.","PeriodicalId":120519,"journal":{"name":"2006 Northern Optics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Simulation of Photonic Band Gap Waveguides in Lead-Lanthanum Zirconate-Titanate\",\"authors\":\"O. Nordseth, T. Tybell, J. Grepstad\",\"doi\":\"10.1109/NO.2006.348372\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Simulations of photonic crystals slabs (PCSs) in thin films of lead-lanthanum zirconate-titanate (PLZT) show band gaps larger than 27 % of the mid-gap frequency for a hexagonal hole-type photonic crystal. The vertical asymmetry caused by the introduction of electrode and buffer layers in a thin film stack, required for epitaxial growth on silicon, does not appreciably affect the photonic crystal properties. Waveguides can be formed in the PCS by removing rows of holes from the crystal lattice. We find that the propagation losses in such waveguide are strongly affected by the thickness and optical attenuation coefficient of the electrode layer, and that the transmission through a 60 degree waveguide bend can be substantially increased by introduction of additional defects.\",\"PeriodicalId\":120519,\"journal\":{\"name\":\"2006 Northern Optics\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 Northern Optics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NO.2006.348372\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 Northern Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NO.2006.348372","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simulation of Photonic Band Gap Waveguides in Lead-Lanthanum Zirconate-Titanate
Simulations of photonic crystals slabs (PCSs) in thin films of lead-lanthanum zirconate-titanate (PLZT) show band gaps larger than 27 % of the mid-gap frequency for a hexagonal hole-type photonic crystal. The vertical asymmetry caused by the introduction of electrode and buffer layers in a thin film stack, required for epitaxial growth on silicon, does not appreciably affect the photonic crystal properties. Waveguides can be formed in the PCS by removing rows of holes from the crystal lattice. We find that the propagation losses in such waveguide are strongly affected by the thickness and optical attenuation coefficient of the electrode layer, and that the transmission through a 60 degree waveguide bend can be substantially increased by introduction of additional defects.