薄膜DFB激光器在硅上的10gbps操作，具有创纪录的高调制效率

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI:10.1109/ICIPRM.2016.7528751

D. Inoue, T. Hiratani, K. Fukuda, T. Tomiyasu, T. Amemiya, N. Nishiyama, S. Arai

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引用次数: 1

摘要

我们成功地演示了在硅衬底上高速直接调制GaInAsP/InP膜DFB激光器用于片上光学互连。该器件的阈值电流为0.21mA，单模工作，SMSR = 47dB。通过小信号调制，获得了创纪录的11GHz/mA1/2的调制效率。误码率(BER) <;的10gbps直接调制。10-9在1mA偏置电流下演示。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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10 Gbps operation of membrane DFB laser on silicon with record high modulation efficiency

We successfully demonstrated high-speed direct modulation of GaInAsP/InP membrane DFB laser on Si substrate for on-chip optical interconnection. The device showed threshold current of 0.21mA and single-mode operation with SMSR = 47dB. From small signal modulation, a record high modulation efficiency of 11GHz/mA1/2 was obtained. A 10 Gbps direct modulation with a bit-error-rate (BER) <; 10-9 was demonstrated at 1mA bias current.

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2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)

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