1 µm技术中温度对mos晶体管公差的影响

D. Takács, U. Schwabe, U. Burker
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引用次数: 1

摘要

在1µm si栅极技术中,通道长度和温度对电气设备参数有很大影响。给出了不同通道掺杂量和S/D结深度下通道长度和温度对阈值电压、击穿电压和亚阈值电流影响的实验数据。结果讨论了电气器件公差和标准硅栅技术的局限性。
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The influence of temperature on the tolerances of MOS-transistors in a 1 µm technology
In a 1 µm Si-gate technology, channel length and temperature have a strong impact on the electrical device parameters. Experimental data on the influence of the channel length and the temperature on threshold voltage, breakdown voltage and subthreshold currents are presented for different channel dopings and S/D junction depths. The results are discussed with regard to the electrical device tolerances and to limitations in standard Si-gate technologies.
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