A. L. F. Cauduro, C. I. Sombrio, P. Franzen, H. Boudinov, D. L. Baptista
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Engineering of the photoluminescence of ZnO nanowires by different growth and annealing environments
Optical properties of ZnO nanowires were investigated through photoluminescence (PL) at room and low temperatures. An excitonic structure was observed in the UV band emission and we are able to distinguish between free excitons, bound excitons and donor acceptor pairs. The PL spectra shows deep level emissions ranging from 1.4 eV up to 2.8 eV, strongly depending on surface defects whereas the red emission (1.7 eV) is activated at cryogenic temperatures. We attribute the green luminescence (2.4 eV) emission to the presence of zinc vacancies into ZnO nanowires. Further evidences that confirm the mechanism are observed in the PL emission spectra after annealing in O2 or Ar environments.
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