{"title":"PMOS阵列自保护能力限制","authors":"V. Vashchenko, A. Tazzoli, A. Shibkov","doi":"10.1109/EOSESD.2016.7592558","DOIUrl":null,"url":null,"abstract":"A study of PMOS arrays self-protection capability, related HBM-TLP miscorrelation and HBM passing level windowing effect is presented. Based on experimental results and 2D mixed-mode numerical simulation analysis the physical mechanism of the PMOS self-protection limitation is determined to be a complex two-stage phenomenon. It is initiated by a “weak” isothermal avalanche-injection conductivity modulation followed by electro-thermal spatial current instability in the 1μs time domain due to the positive feedback between thermal carrier generation and local power dissipation. The follow-up measures to improve the PMOS array self-protection capability are discussed and validated.","PeriodicalId":239756,"journal":{"name":"2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"PMOS arrays self-protection capability limitation\",\"authors\":\"V. Vashchenko, A. Tazzoli, A. Shibkov\",\"doi\":\"10.1109/EOSESD.2016.7592558\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A study of PMOS arrays self-protection capability, related HBM-TLP miscorrelation and HBM passing level windowing effect is presented. Based on experimental results and 2D mixed-mode numerical simulation analysis the physical mechanism of the PMOS self-protection limitation is determined to be a complex two-stage phenomenon. It is initiated by a “weak” isothermal avalanche-injection conductivity modulation followed by electro-thermal spatial current instability in the 1μs time domain due to the positive feedback between thermal carrier generation and local power dissipation. The follow-up measures to improve the PMOS array self-protection capability are discussed and validated.\",\"PeriodicalId\":239756,\"journal\":{\"name\":\"2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EOSESD.2016.7592558\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EOSESD.2016.7592558","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A study of PMOS arrays self-protection capability, related HBM-TLP miscorrelation and HBM passing level windowing effect is presented. Based on experimental results and 2D mixed-mode numerical simulation analysis the physical mechanism of the PMOS self-protection limitation is determined to be a complex two-stage phenomenon. It is initiated by a “weak” isothermal avalanche-injection conductivity modulation followed by electro-thermal spatial current instability in the 1μs time domain due to the positive feedback between thermal carrier generation and local power dissipation. The follow-up measures to improve the PMOS array self-protection capability are discussed and validated.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
