{"title":"纳米级晶体管的新方面","authors":"K. Natori, T. Kurusu","doi":"10.1109/IWNC.2006.4570997","DOIUrl":null,"url":null,"abstract":"New aspect of device characteristics emerging in nanostructured transistors are reviewed. Three topics are introduced and discussed. First, a new type of parasitic capacitance related to the charge layer thickness in capacitor electrode is discussed. Next, the quasi-ballistic operation of MOSFETs is analyzed in three aspects- one is the reflection-transmission formalism of MOS transport, another is an analysis of the device by Monte Carlo simulation, and the other discusses influence of device structure on its transport. In the last, we compare performance of a carbon nanotube FET to that of a silicon MOSFET.","PeriodicalId":356139,"journal":{"name":"2006 International Workshop on Nano CMOS","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Novel aspects of nanoscale transistors\",\"authors\":\"K. Natori, T. Kurusu\",\"doi\":\"10.1109/IWNC.2006.4570997\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"New aspect of device characteristics emerging in nanostructured transistors are reviewed. Three topics are introduced and discussed. First, a new type of parasitic capacitance related to the charge layer thickness in capacitor electrode is discussed. Next, the quasi-ballistic operation of MOSFETs is analyzed in three aspects- one is the reflection-transmission formalism of MOS transport, another is an analysis of the device by Monte Carlo simulation, and the other discusses influence of device structure on its transport. In the last, we compare performance of a carbon nanotube FET to that of a silicon MOSFET.\",\"PeriodicalId\":356139,\"journal\":{\"name\":\"2006 International Workshop on Nano CMOS\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 International Workshop on Nano CMOS\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWNC.2006.4570997\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Workshop on Nano CMOS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWNC.2006.4570997","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
New aspect of device characteristics emerging in nanostructured transistors are reviewed. Three topics are introduced and discussed. First, a new type of parasitic capacitance related to the charge layer thickness in capacitor electrode is discussed. Next, the quasi-ballistic operation of MOSFETs is analyzed in three aspects- one is the reflection-transmission formalism of MOS transport, another is an analysis of the device by Monte Carlo simulation, and the other discusses influence of device structure on its transport. In the last, we compare performance of a carbon nanotube FET to that of a silicon MOSFET.
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