采用双集成技术设计和实现CMOS电路以降低功耗

M. Kamaraju, Veerendra Satyavolu, K. Kishore
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引用次数: 2

摘要

近年来,超大规模集成电路(VLSI)的技术和趋势发生了许多变化。VLSI的主要因素是面积、速度和功率。由于在消费电子、医疗应用和移动应用等所有实时应用中都需要低功耗电路。于是低功耗设计的主题就被提了出来。本文介绍了一种利用功率门控双亚阈值(PGDST)电源电压降低数字CMOS电路功耗的方法。这种双电源电压的目的是一些超低功耗应用和低电源电压的电路。他们在单电源电压下没有得到令人满意的结果。次级电源电压分配给栅极,元件取决于电路中的关键路径和路径密度。电源电压级的相应电路采用功率门控技术,以降低功耗。整个工作是在Linux操作系统上使用Mentor Graphics后端工具与Pyxis Schematic 10.3版本实现的。采用该技术可大大降低设计电路的功耗,提高设计电路的性能。
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Design and realization of CMOS circuits using dual integrated technique to reduce power dissipation
Many a change have been taking place in the technologies and trends in very large scale integration (VLSI) these days. The main factors in VLSI are Area, Speed and power. As there is a need of low power circuits in all real time applications like consumer electronics, medical applications, and mobile applications. So low power design theme is raised. As this paper introduces a method to reduce power dissipation in digital CMOS circuits using power gated dual sub threshold (PGDST) supply voltage. The purpose of this dual supply voltage is some of ultra-low power applications and the circuits with low supply voltages. They did not give satisfactory results with single supply voltage. This secondary supply voltage is assigned for gates, components depends on the critical path and path density in the circuit. Power gating technique is applied for corresponding circuit at supply voltage level to reduce power dissipation. This entire work is implemented in Mentor Graphics Back End Tool with Pyxis Schematic 10.3 version on Linux operating system. By using this technique high amount of power dissipation is reduced in designed circuits and increases the performance of the designed circuits.
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