芯片上智能电网传感器系统的低功耗带隙参考电压源

Changbao Xu, Mingyong Xin, Yulei Wang, Junfei Tang, Dehong Liu, Xiaowen Jiang
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引用次数: 1

摘要

对于智能电网传感器片上系统,传统的带隙参考电路功耗高,因此必须设计低功耗的带隙参考电路,以满足其复杂的工作环境。本文设计了一种用于智能电网传感器系统芯片的低功耗带隙参考电压源。与传统带隙参考电压源相比,本设计结合了传统BJT带隙参考电压源的高稳定性和亚阈值带隙参考电压源的低功耗特点,并采用数字信号控制。在正常模式下,只有传统的BJT带隙基准(主带隙)工作,在休眠模式下只有亚阈值低功耗带隙基准(辅助带隙)工作。采用UMC 55nm ULP CMOS工艺实现,正常模式功耗为65µW,温度系数(TC)为7.7ppm/°C, PSRR为- 78dB;切换到休眠模式后,功耗为2.38µW, TC为1.45ppm/°C。在供电电压为1.6V时提供稳定的1.2V参考电压,满足片上智能电网传感器系统在复杂工况下对稳定供电的需求。
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A Low-power Bandgap Reference Voltage Source for Smart Grid Sensor System on Chip
For smart grid sensor system-on-chips, traditional bandgap reference circuits have high power consumption, so low-power bandgap reference circuits must be designed that can meet their complex operating environments. This work designs a low-power bandgap reference voltage source for smart grid sensor system chips. Compared to traditional bandgap reference voltage sources, this design combines the high stability of the traditional BJT bandgap reference and the low power consumption characteristics of the sub-threshold bandgap reference, and they are controlled by a digital signal. In normal mode, only conventional BJT bandgap reference (main bandgap) works, and only the sub-threshold low-power bandgap reference (auxiliary bandgap) works in sleep mode. Realized in UMC 55nm ULP CMOS process, the normal mode power consumption is 65 µ W, the temperature coefficient (TC) is 7.7ppm/°C, and the PSRR is - 78dB; After switching to the sleep mode, the power consumption is 2.38 µ W with a TC 1.45ppm/°C. It provides a stable 1.2V reference voltage when the power supply voltage is 1.6V to meet the demand for stable power supply of the on-chip smart grid sensor system under complex working conditions.
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