单个GaN纳米线的电学特性

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI:10.1109/DRC.2005.1553138

E. Stern, Guosheng Cheng, E. Cimpoiasu, Robert F. Klie, J. F. Klemic, D. Kretzschmar, J. Hyland, A. Sanders, R. Munden, Mark A. Reed

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引用次数: 1

摘要

作者通过对500多个纳米线器件的研究，对热壁cvd制备的GaN纳米线进行了全面的电学表征，并提取了影响纳米线质量的生长参数。电线是通过气-液-固机制生长的

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Electrical characterization of individual GaN nanowires

The authors performed a thorough electrical characterization of hot-wall-CVD fabricated GaN nanowires (NWs) by studying over 500 single NW devices, and have extracted the growth parameters responsible for wire quality. Wires were grown by the vapor-liquid-solid mechanism

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63rd Device Research Conference Digest, 2005. DRC '05.

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