纳米片mosfet的交流负极效应模拟

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI:10.23919/SISPAD49475.2020.9241656

Sung-Min Hong, Phil-Hun Ahn

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引用次数: 2

摘要

本文介绍了纳米片mosfet的交流非平衡格林函数(NEGF)仿真。为了有效实现，采用解耦模式空间方法对交流NEGF方程进行离散化。对泊松方程进行自洽求解，得到静电势。我们的内部器件模拟器G-Device用于模拟纳米片mosfet的交流响应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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AC NEGF Simulation of Nanosheet MOSFETs

In this work, an AC nonequilibrium Green function (NEGF) simulation for nanosheet MOSFETs is presented. The AC NEGF equations are discretized using a decoupled mode-space approach for efficient implementation. The Poisson equation is solved self consistently to obtain the electrostatic potential. Our in-house device simulator, G-Device, is used to simulate the AC responses on nanosheet MOSFETs.

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2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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