AlGaAs/GaAs HBT可靠性:依赖于材料和与基带噪声的相关性

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI:10.1109/GAAS.1997.628259

B. Bayraktaroglu, G. Dix, S. Mohammadi, D. Pavlidis

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引用次数: 6

摘要

发现AlGaAs/GaAs HBT的长期可靠性与起始外延材料有很强的依赖性。测量和外推的寿命范围从10/sup 2/到10/sup 9/小时，器件制造在来自3个不同供应商的晶圆上。低频基带噪声特性被用来识别导致电流增益下降的来源和机制的性质。

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AlGaAs/GaAs HBT reliability: dependence on material and correlation to baseband noise

The long-term reliability of an AlGaAs/GaAs HBT was found to have a strong dependence on the starting epitaxial material. The measured and extrapolated lifetimes ranged from 10/sup 2/ to 10/sup 9/ hours with devices fabricated on wafers obtained from 3 different vendors. The low frequency baseband noise characteristics were used to identify the source and the nature of mechanisms that lead to current gain degradation.

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997

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