{"title":"900 MHz单片低噪声放大器射频性能的生产直流筛选","authors":"Sang-Gug Lee, R. D. Schultz","doi":"10.1109/MCS.1995.470989","DOIUrl":null,"url":null,"abstract":"Novel approaches for production DC screening of a 900 MHz monolithic silicon bipolar low noise amplifier for noise figure and power gain are presented. The proposed techniques can be used in screening the performance of any RF IC by setting limits on the AC performance of the active devices used.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"114 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Production DC screening for RF performance of a 900 MHz monolithic low noise amplifier\",\"authors\":\"Sang-Gug Lee, R. D. Schultz\",\"doi\":\"10.1109/MCS.1995.470989\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Novel approaches for production DC screening of a 900 MHz monolithic silicon bipolar low noise amplifier for noise figure and power gain are presented. The proposed techniques can be used in screening the performance of any RF IC by setting limits on the AC performance of the active devices used.<<ETX>>\",\"PeriodicalId\":325779,\"journal\":{\"name\":\"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers\",\"volume\":\"114 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1995.470989\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1995.470989","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Production DC screening for RF performance of a 900 MHz monolithic low noise amplifier
Novel approaches for production DC screening of a 900 MHz monolithic silicon bipolar low noise amplifier for noise figure and power gain are presented. The proposed techniques can be used in screening the performance of any RF IC by setting limits on the AC performance of the active devices used.<>