通过金属间电介质的结构加固消除键合垫的损坏

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1900-01-01 DOI:10.1109/RELPHY.1998.670555

M. Saran, R. Cox, C. Martin, G. Ryan, T. Kudoh, M. Kanasugi, J. Hortaleza, M. Ibnabdeljalil, M. Murtuza, D. Capistrano, R. Roderos, R. Macaraeg

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引用次数: 25

摘要

提出了一种新的与金属间介电堆中机械弱的低k介电体有关的键破坏机制。通过使用金属栅格对电介质堆栈进行机械加固被证明可以有效地防止这种损坏。讨论了可能的失效机制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Elimination of bond-pad damage through structural reinforcement of intermetal dielectrics

A new bond failure mechanism related to the new, mechanically weak, low-k dielectrics in intermetal dielectric stacks is presented. Mechanical reinforcement of the dielectric stack through the use of metal grids is demonstrated to be effective to prevent this damage. Possible failure mechanisms are discussed.

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1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)

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