实时TCAD:人工智能时代TCAD的新范式

Sanghoon Myung, Jinwoo Kim, Yongwoo Jeon, Wonik Jang, I. Huh, Jaemin Kim, Songyi Han, K. Baek, Jisu Ryu, Yoon-suk Kim, Jiseong Doh, Jae-ho Kim, C. Jeong, Daesin Kim
{"title":"实时TCAD:人工智能时代TCAD的新范式","authors":"Sanghoon Myung, Jinwoo Kim, Yongwoo Jeon, Wonik Jang, I. Huh, Jaemin Kim, Songyi Han, K. Baek, Jisu Ryu, Yoon-suk Kim, Jiseong Doh, Jae-ho Kim, C. Jeong, Daesin Kim","doi":"10.23919/SISPAD49475.2020.9241622","DOIUrl":null,"url":null,"abstract":"This paper presents a novel approach to enable real-time device simulation and optimization. State-of-the-art algorithms which can describe semiconductor domain are adopted to train deep learning models whose input and output are process condition and doping profile / electrical characteristic, respectively. Our framework enables to update automatically deep learning models by estimating the uncertainty of the model prediction. Our Real-Time TCAD framework is validated on 130nm processes for display driver integration circuit (DDI), and 1) prediction time was 530,000 times faster than conventional TCAD, and time spent for process optimization was reduced by 300,000 times compared to human expert, 2) the model achieved average accuracy of 99% compared to TCAD simulation results, and thus, 3) process development time for DDI was reduced by 8 weeks.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"140 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Real-Time TCAD: a new paradigm for TCAD in the artificial intelligence era\",\"authors\":\"Sanghoon Myung, Jinwoo Kim, Yongwoo Jeon, Wonik Jang, I. Huh, Jaemin Kim, Songyi Han, K. Baek, Jisu Ryu, Yoon-suk Kim, Jiseong Doh, Jae-ho Kim, C. Jeong, Daesin Kim\",\"doi\":\"10.23919/SISPAD49475.2020.9241622\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a novel approach to enable real-time device simulation and optimization. State-of-the-art algorithms which can describe semiconductor domain are adopted to train deep learning models whose input and output are process condition and doping profile / electrical characteristic, respectively. Our framework enables to update automatically deep learning models by estimating the uncertainty of the model prediction. Our Real-Time TCAD framework is validated on 130nm processes for display driver integration circuit (DDI), and 1) prediction time was 530,000 times faster than conventional TCAD, and time spent for process optimization was reduced by 300,000 times compared to human expert, 2) the model achieved average accuracy of 99% compared to TCAD simulation results, and thus, 3) process development time for DDI was reduced by 8 weeks.\",\"PeriodicalId\":206964,\"journal\":{\"name\":\"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"140 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SISPAD49475.2020.9241622\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SISPAD49475.2020.9241622","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11

摘要

本文提出了一种实现器件实时仿真和优化的新方法。采用最先进的描述半导体领域的算法训练深度学习模型,其输入和输出分别为工艺条件和掺杂谱/电特性。我们的框架能够通过估计模型预测的不确定性来自动更新深度学习模型。我们的实时TCAD框架在显示驱动集成电路(DDI)的130nm工艺上进行了验证,1)预测时间比传统TCAD快53万倍,工艺优化时间比人类专家缩短了30万倍,2)与TCAD仿真结果相比,模型的平均精度达到99%,因此,3)DDI的工艺开发时间缩短了8周。
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Real-Time TCAD: a new paradigm for TCAD in the artificial intelligence era
This paper presents a novel approach to enable real-time device simulation and optimization. State-of-the-art algorithms which can describe semiconductor domain are adopted to train deep learning models whose input and output are process condition and doping profile / electrical characteristic, respectively. Our framework enables to update automatically deep learning models by estimating the uncertainty of the model prediction. Our Real-Time TCAD framework is validated on 130nm processes for display driver integration circuit (DDI), and 1) prediction time was 530,000 times faster than conventional TCAD, and time spent for process optimization was reduced by 300,000 times compared to human expert, 2) the model achieved average accuracy of 99% compared to TCAD simulation results, and thus, 3) process development time for DDI was reduced by 8 weeks.
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