{"title":"硅衬底上锆钛酸铅厚膜的纵向位移测量","authors":"T. Iijima, H. Okino, T. Yamamoto","doi":"10.1109/ISAF.2007.4393223","DOIUrl":null,"url":null,"abstract":"10-mum-thick PZT films were deposited on the Pt/Ti/SiO2/Si substrates, and 20-to 500-mum-diameter PZT thick film disks on the Si substrate were fabricated. the butterfly shape displacement curves of the top side, bottom side and subtraction of bottom side from top side were measured with twin-beam interferometer, and the effect of the disk diameter on these displacements were compared with FEM simulation. the clamping effect is eliminated when the ratio of the PZT disk diameter, d, to the PZT film thickness, t, is less than three, that is dlt < 3, for 10-mum-thick PZT film. therefore, the actual longitudinal displacement of the PZT films can be evaluated for dlt < 3.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Longitudinal Displacement Measurement of Lead Zirconate Titanate Thick Films Deposited on Silicon substrates\",\"authors\":\"T. Iijima, H. Okino, T. Yamamoto\",\"doi\":\"10.1109/ISAF.2007.4393223\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"10-mum-thick PZT films were deposited on the Pt/Ti/SiO2/Si substrates, and 20-to 500-mum-diameter PZT thick film disks on the Si substrate were fabricated. the butterfly shape displacement curves of the top side, bottom side and subtraction of bottom side from top side were measured with twin-beam interferometer, and the effect of the disk diameter on these displacements were compared with FEM simulation. the clamping effect is eliminated when the ratio of the PZT disk diameter, d, to the PZT film thickness, t, is less than three, that is dlt < 3, for 10-mum-thick PZT film. therefore, the actual longitudinal displacement of the PZT films can be evaluated for dlt < 3.\",\"PeriodicalId\":321007,\"journal\":{\"name\":\"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2007.4393223\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2007.4393223","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Longitudinal Displacement Measurement of Lead Zirconate Titanate Thick Films Deposited on Silicon substrates
10-mum-thick PZT films were deposited on the Pt/Ti/SiO2/Si substrates, and 20-to 500-mum-diameter PZT thick film disks on the Si substrate were fabricated. the butterfly shape displacement curves of the top side, bottom side and subtraction of bottom side from top side were measured with twin-beam interferometer, and the effect of the disk diameter on these displacements were compared with FEM simulation. the clamping effect is eliminated when the ratio of the PZT disk diameter, d, to the PZT film thickness, t, is less than three, that is dlt < 3, for 10-mum-thick PZT film. therefore, the actual longitudinal displacement of the PZT films can be evaluated for dlt < 3.
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