用于40 Gbps应用的InP和GaAs组件

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964387

D. Streit, R. Lai, A. Gutierrez-Aitken, M. Siddiqui, B. Allen, A. Chau, W. Beale, A. Oki

{"title":"用于40 Gbps应用的InP和GaAs组件","authors":"D. Streit, R. Lai, A. Gutierrez-Aitken, M. Siddiqui, B. Allen, A. Chau, W. Beale, A. Oki","doi":"10.1109/GAAS.2001.964387","DOIUrl":null,"url":null,"abstract":"We have developed a number of products for 40 Gbps applications, including GaAs and InP HEMT modulator drivers, InP-based monolithically integrated PIN-TIA circuits, InP double heterojunction HBT TIAs, and high responsivity dual-absorption PIN diodes. A number of other products are currently in development, including a number of InP DHBT digital circuits.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":"{\"title\":\"InP and GaAs components for 40 Gbps applications\",\"authors\":\"D. Streit, R. Lai, A. Gutierrez-Aitken, M. Siddiqui, B. Allen, A. Chau, W. Beale, A. Oki\",\"doi\":\"10.1109/GAAS.2001.964387\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have developed a number of products for 40 Gbps applications, including GaAs and InP HEMT modulator drivers, InP-based monolithically integrated PIN-TIA circuits, InP double heterojunction HBT TIAs, and high responsivity dual-absorption PIN diodes. A number of other products are currently in development, including a number of InP DHBT digital circuits.\",\"PeriodicalId\":269944,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"25\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.2001.964387\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2001.964387","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 25

摘要

我们已经开发了许多用于40 Gbps应用的产品，包括GaAs和InP HEMT调制器驱动器，基于InP的单片集成PIN- tia电路，InP双异质结HBT TIAs和高响应双吸收PIN二极管。许多其他产品目前正在开发中，包括一些InP DHBT数字电路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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InP and GaAs components for 40 Gbps applications

We have developed a number of products for 40 Gbps applications, including GaAs and InP HEMT modulator drivers, InP-based monolithically integrated PIN-TIA circuits, InP double heterojunction HBT TIAs, and high responsivity dual-absorption PIN diodes. A number of other products are currently in development, including a number of InP DHBT digital circuits.

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

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