射频MEMS:不断发展的射频开关技术的优势与挑战

C. Goldsmith, J. Kleber, B. Pillans, D. Forehand, A. Malczewski, P. Frueh
{"title":"射频MEMS:不断发展的射频开关技术的优势与挑战","authors":"C. Goldsmith, J. Kleber, B. Pillans, D. Forehand, A. Malczewski, P. Frueh","doi":"10.1109/GAAS.2001.964365","DOIUrl":null,"url":null,"abstract":"RF MEMS technology is a new technology that is already finding niche applications in radar and communications systems. Its low power, high performance, and tunability enables potential cost, size, and/or weight improvements in several systems. Emphasis is no longer focused on RF performance, as that aspect is well established. Currently, efforts are underway to establish and improve the reliability of the devices. As with any maturing technology, there is much room for improvement. However, results to date show continuing improvement in lifetime and provide an argument that these devices will eventually have very long lifetimes (> 10/sup 11/ cycles).","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"RF MEMS: benefits & challenges of an evolving RF switch technology\",\"authors\":\"C. Goldsmith, J. Kleber, B. Pillans, D. Forehand, A. Malczewski, P. Frueh\",\"doi\":\"10.1109/GAAS.2001.964365\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"RF MEMS technology is a new technology that is already finding niche applications in radar and communications systems. Its low power, high performance, and tunability enables potential cost, size, and/or weight improvements in several systems. Emphasis is no longer focused on RF performance, as that aspect is well established. Currently, efforts are underway to establish and improve the reliability of the devices. As with any maturing technology, there is much room for improvement. However, results to date show continuing improvement in lifetime and provide an argument that these devices will eventually have very long lifetimes (> 10/sup 11/ cycles).\",\"PeriodicalId\":269944,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.2001.964365\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2001.964365","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16

摘要

射频MEMS技术是一项新技术,已经在雷达和通信系统中找到了小众应用。它的低功耗、高性能和可调性使许多系统的潜在成本、尺寸和/或重量得到改善。重点不再集中在射频性能上,因为这方面已经很好地建立了。目前,正在努力建立和提高设备的可靠性。与任何成熟的技术一样,它还有很大的改进空间。然而,迄今为止的研究结果显示,这些设备的寿命持续改善,并提供了一个论点,即这些设备最终将具有非常长的寿命(bbb10 /sup 11/ cycles)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
RF MEMS: benefits & challenges of an evolving RF switch technology
RF MEMS technology is a new technology that is already finding niche applications in radar and communications systems. Its low power, high performance, and tunability enables potential cost, size, and/or weight improvements in several systems. Emphasis is no longer focused on RF performance, as that aspect is well established. Currently, efforts are underway to establish and improve the reliability of the devices. As with any maturing technology, there is much room for improvement. However, results to date show continuing improvement in lifetime and provide an argument that these devices will eventually have very long lifetimes (> 10/sup 11/ cycles).
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
60GHz-band high-gain MMIC cascode HBT amplifier An 850 nm wavelength monolithic integrated photoreceiver with a single-power-supplied transimpedance amplifier based on GaAs PHEMT technology A monolithic X-band class-E power amplifier Extremely high P1dB MMIC amplifiers for Ka-band applications Ultra low noise 2.5 Gbit/s 3.3V transimpedance amplifier with automatic gain control
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1