15.3在300Hz带宽下实现43dB信噪比和40dB信噪比的a-IGZO异步δ - σ箔片调制器

2017 IEEE International Solid-State Circuits Conference (ISSCC) Pub Date : 2017-03-02 DOI:10.1109/ISSCC.2017.7870360

Carmine Garripoli, J. Steen, E. Smits, G. Gelinck, A. Roermund, E. Cantatore

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引用次数: 28

摘要

在柔性大面积衬底上制备的非晶IGZO (a-IGZO) tft具有比a-Si或有机对应物更好的迁移率和良好的均匀性。这些特点使a-IGZO TFTs成为大面积传感(例如应变，压力，红外)，低成本rfid增强传感器和生物电位监测的有吸引力的技术。在这种情况下，在鲁棒表示中准确转换模拟传感器信号是至关重要的。最常见的选择是同步数字字，但两级PWM表示是另一种有趣的可能性。二进制PWM可以通过导线传输，也可以通过射频调幅传输，对噪声和干扰具有很高的抗扰性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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15.3 An a-IGZO asynchronous delta-sigma modulator on foil achieving up to 43dB SNR and 40dB SNDR in 300Hz bandwidth

Amorphous IGZO (a-IGZO) TFTs fabricated on flexible large-area substrates provide better mobility than a-Si or organic counterparts and good uniformity. These features make a-IGZO TFTs an attractive technology for large-area sensing (e.g. strain, pressure, IR), low-cost RFIDs augmented with sensors and monitoring of biopotentials. In this context, it is crucial to accurately transform analogue sensor signals in a robust representation. The most common choice is a synchronous digital word, but a two-level PWM representation is another interesting possibility. Binary PWM can be transmitted on wire or via RF amplitude modulation with high immunity to noise and interferers.

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2017 IEEE International Solid-State Circuits Conference (ISSCC)

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