密闭NMOS器件的潜在b辐射损伤

19th International Reliability Physics Symposium Pub Date : 1981-04-01 DOI:10.1109/IRPS.1981.362969

J. L. Boyle, R. Mcintyre, R. E. Youtz, J. T. Nelson

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引用次数: 1

摘要

NMOS VLSI器件的失效机制可以追溯到由于在其密封封装中发现残留放射性气体而造成的辐射损伤。圈闭气体是密封测试的结果。本报告描述了NMOS存储器的特征失效模式以及辐射损伤导致晶体管特性的变化。提出了实施放射性示踪剂泄漏测试的标准，以防止失败。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Latent B-Radiation Damage in Hermetically Sealed NMOS Devices

A failure mechanism in NMOS VLSI devices has been traced to radiation damage due to residual radioactive gas found in their hermetically sealed packages. The entrapped gas is a result of hermeticity testing. This report describes the characteristic failure mode of NMOS memories and the changes in transistor characteristics that result from radiation damage. Criteria for the implementation of radioactive tracer leak testing are proposed to prevent failures.

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19th International Reliability Physics Symposium

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