论MOSFET小信号参数的匹配行为

R. Thewes, C. Linnenbank, U. Kollmer, S. Burges, M. Dileo, M. Clincy, U. Schaper, R. Brederlow, R. Seibert, W. Weber
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引用次数: 14

摘要

提出了一种用于精确表征mosfet匹配行为的阵列测试结构。除了标准失配参数漏极电流I/sub D/外,高分辨率测量原理允许表征小信号参数跨导g/sub m/,特别是差分输出电导g/sub DS/。实测数据显示了该方法的性能。而对于I/sub D/和g/sub m/的归一化标准差,得到了众所周知的与(WL)/sup -1/2/的比例关系,g/sub DS/的归一化标准差明显偏离了这种宽度和长度依赖关系。对于该参数,发现与W/sup -1/2/成比例。
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On the matching behavior of MOSFET small signal parameters
An array test structure for precise characterization of the matching behavior of MOSFETs is presented. Besides the standard mismatch parameter drain current I/sub D/, the high resolution measurement principle allows the characterization of the small signal parameters transconductance g/sub m/ and in particular differential output conductance g/sub DS/. Measured data are shown to demonstrate the performance of the method. Whereas for the normalized standard deviations of I/sub D/ and g/sub m/ the well known proportionality to (WL)/sup -1/2/ is obtained, the normalized standard deviation of g/sub DS/ clearly deviates from this width and length dependence. For this parameter, proportionality to W/sup -1/2/ is found.
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