R. Thewes, C. Linnenbank, U. Kollmer, S. Burges, M. Dileo, M. Clincy, U. Schaper, R. Brederlow, R. Seibert, W. Weber
{"title":"论MOSFET小信号参数的匹配行为","authors":"R. Thewes, C. Linnenbank, U. Kollmer, S. Burges, M. Dileo, M. Clincy, U. Schaper, R. Brederlow, R. Seibert, W. Weber","doi":"10.1109/ICMTS.2000.844420","DOIUrl":null,"url":null,"abstract":"An array test structure for precise characterization of the matching behavior of MOSFETs is presented. Besides the standard mismatch parameter drain current I/sub D/, the high resolution measurement principle allows the characterization of the small signal parameters transconductance g/sub m/ and in particular differential output conductance g/sub DS/. Measured data are shown to demonstrate the performance of the method. Whereas for the normalized standard deviations of I/sub D/ and g/sub m/ the well known proportionality to (WL)/sup -1/2/ is obtained, the normalized standard deviation of g/sub DS/ clearly deviates from this width and length dependence. For this parameter, proportionality to W/sup -1/2/ is found.","PeriodicalId":447680,"journal":{"name":"ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"On the matching behavior of MOSFET small signal parameters\",\"authors\":\"R. Thewes, C. Linnenbank, U. Kollmer, S. Burges, M. Dileo, M. Clincy, U. Schaper, R. Brederlow, R. Seibert, W. Weber\",\"doi\":\"10.1109/ICMTS.2000.844420\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An array test structure for precise characterization of the matching behavior of MOSFETs is presented. Besides the standard mismatch parameter drain current I/sub D/, the high resolution measurement principle allows the characterization of the small signal parameters transconductance g/sub m/ and in particular differential output conductance g/sub DS/. Measured data are shown to demonstrate the performance of the method. Whereas for the normalized standard deviations of I/sub D/ and g/sub m/ the well known proportionality to (WL)/sup -1/2/ is obtained, the normalized standard deviation of g/sub DS/ clearly deviates from this width and length dependence. For this parameter, proportionality to W/sup -1/2/ is found.\",\"PeriodicalId\":447680,\"journal\":{\"name\":\"ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)\",\"volume\":\"102 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-03-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.2000.844420\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2000.844420","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
On the matching behavior of MOSFET small signal parameters
An array test structure for precise characterization of the matching behavior of MOSFETs is presented. Besides the standard mismatch parameter drain current I/sub D/, the high resolution measurement principle allows the characterization of the small signal parameters transconductance g/sub m/ and in particular differential output conductance g/sub DS/. Measured data are shown to demonstrate the performance of the method. Whereas for the normalized standard deviations of I/sub D/ and g/sub m/ the well known proportionality to (WL)/sup -1/2/ is obtained, the normalized standard deviation of g/sub DS/ clearly deviates from this width and length dependence. For this parameter, proportionality to W/sup -1/2/ is found.