纳米技术中的超紧凑MOS模型

2011 20th European Conference on Circuit Theory and Design (ECCTD) Pub Date : 2011-10-13 DOI:10.1109/ECCTD.2011.6043403

Elio Consoli, G. Giustolisi, G. Palumbo

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引用次数: 2

摘要

本文提出了一种纳米MOS晶体管的超紧凑模型。从经典紧凑模型的修改和更精确的版本开始，在纳米技术中占主导地位的所有主要物理效应都以极其简单的方式包括在内。通过65纳米CMOS技术的仿真验证了模型的有效性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An ultra-compact MOS model in nanometer technologies

In this paper, an ultra-compact model for nanometer MOS transistors is proposed. Starting from modified and more accurate versions of classical compact models, all the main physical effects that are predominant in nanometer technologies are included in an extremely simple way. Model effectiveness is verified through simulations in a 65-nm CMOS technology.

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2011 20th European Conference on Circuit Theory and Design (ECCTD)

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