大晶粒杂化钙钛矿的光电特性和光物理

A. Mohite, W. Nie, J. Blancon, H. Tsai, Gautam Gupta
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摘要

有机-无机或(杂化)钙钛矿是一类特殊的钙钛矿,其化学式一般为AMX3,是通过低温合成方法形成的。它们表现出特殊的基本特性,这些特性已被转化为光伏(1)、发光二极管(2)、光电探测器(3)、热电装置、激光器(4)、光催化剂(5)和伽马射线探测器(6,7)的原理验证演示,其中光伏中的能量收集研究最多(1,8 -15)。在取得巨大进展的同时,学界报道的杂化钙钛矿在晶体质量、晶粒尺寸和微观结构上的高度可变性是该领域存在的一个根本瓶颈。这导致了对实验数据的多种解释,因此关键的基本机制在很大程度上仍未解决。对于这一不可靠性能问题的理想解决方案是能够再生地生长具有高结晶度的杂化钙钛矿薄膜,从而可以获得固有的物理性能,否则这些物理性能将被不可靠的加工相关微观结构所掩盖。在这里,我们展示了我们最近开发的薄膜晶体快速生长技术,称为热铸造,它使我们能够生长出高结晶质量,均匀,无针孔的混合钙钛矿薄膜,其晶粒尺寸为数百微米到毫米。光物理性质的研究表明,所得到的大晶粒表现为经典的III-V直接带隙半导体。然而,随着晶粒尺寸的减小,这些特性不能再用直接间隙半导体的模型来描述。当将ITO/PEDOT:PSS/钙钛矿/PCBM/Al集成到简单的“倒置”光伏双层结构中时,无需最小优化,电流电压曲线为15.37%,无迟滞。利用电容电压测量和开路电压的光强依赖性进行电学表征表明,钙钛矿薄膜是固有的,光产生的电荷载流子通过双分子过程重组,仅在高质量的半导体材料中观察到。
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Optoelectronic properties and photo-physics of large grain hybrid perovskites
Organic-Inorganic or (Hybrid) perovskites are a special class of perovskites with a general chemical formula of AMX3 formed by using low-temperature synthesis approaches. They exhibit exceptional fundamental properties that have been translated into proof-of-principle demonstrations of photovoltaics (1), light emitting diodes(2), photodetectors(3), thermoelectric devices, lasers(4), photo-catalysts(5) and gamma ray detectors(6, 7) among which energy harvesting in photovoltaics has been the most studied(1, 8-15). While tremendous progress is being made, a fundamental bottleneck in that has existed in field is the high degree of variability in crystalline quality, grain-size, and microstructure of hybrid perovskites reported by the community. This has resulted in multiple interpretations of experimental data and thus key fundamental mechanisms remain largely unresolved. An ideal solution to this issue of non reliable properties is the ability to reproducibly grow hybrid perovskite thin-films with high degree of crystallinity, which allow access to the intrinsic physical properties, which are otherwise masked by non-reliable processing dependent microstructure. Here we present our recently developed fast thin-film crystal growth technique termed as hot-casting, which allows us to grow high crystalline quality, uniform, pinhole free films of hybrid perovskites with hundreds of microns to mm-scale grain-size. Investigation of photo-physical properties reveals that the resulting large grains behave as classical III-V direct band-gap semiconductors. However, as the grain-size decreases, the properties can no longer be described using models described for direct gap semiconductors. When incorporated into a simple "inverted" photovoltaic bilayer architecture with ITO/PEDOT:PSS/Perovskite/PCBM/Al, with no minimal optimization a hysteresis free device with a current-voltage curve of 15.37%. Electrical characterization using capacitance-voltage measurements and light-intensity dependence of the open circuit voltage suggest that perovskite films are intrinsic and the photogenerated charge carrier recombine through a bimolecular process, only observed in high quality semiconducting materials.
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