重掺杂CMOS工艺中衬底噪声耦合的综合几何相关宏观模型

Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285) Pub Date : 2002-08-07 DOI:10.1109/CICC.2002.1012887

D. Ozis, T. Fiez, K. Mayaram

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引用次数: 46

摘要

提出了一种精确的高掺杂CMOS工艺衬底噪声耦合宏观模型。该模型基于Z参数，这些参数随接触距离和尺寸可伸缩。模型的大量实验验证表明，模型的Z参数通常精度在2-8%以内。

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A comprehensive geometry-dependent macromodel for substrate noise coupling in heavily doped CMOS processes

An accurate substrate noise coupling macromodel for heavily doped CMOS processes is presented. The model is based on Z parameters that are scalable with contact separation and size. Extensive experimental validations of the model have demonstrated that the modeled Z parameters are most often accurate to within 2-8%.

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Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)

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