{"title":"MOS-FET RDSon电阻在功率变换器中电流测量的评估","authors":"Rok Pajer, M. Rodic, M. Milanovič","doi":"10.1109/EDPE.2015.7325345","DOIUrl":null,"url":null,"abstract":"This paper presents metal oxide semiconductor field effect transistor (MOS-FET) RDSon resistance evaluation in order to perform the MOS-FET current-measurement. For calculation of RDSon the thermal model of the MOS-FET is explored. For accurate RDSon evaluation in the real time the voltage UDSon is measured during the switch-on transistor operation mode. This measurement is synchronized by PWM triggering in order to measure the average voltage value and consequently the average current during the converter sampling time period. This measurement approach is verified by real-time measurement during the operation of the DC-DC step-up converter. The program algorithm is performed on 32-bit ARM M4 MCU, STM32F407.","PeriodicalId":246203,"journal":{"name":"2015 International Conference on Electrical Drives and Power Electronics (EDPE)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Evaluation of MOS-FET RDSon resistance for current measurement purposes in power converter's applications\",\"authors\":\"Rok Pajer, M. Rodic, M. Milanovič\",\"doi\":\"10.1109/EDPE.2015.7325345\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents metal oxide semiconductor field effect transistor (MOS-FET) RDSon resistance evaluation in order to perform the MOS-FET current-measurement. For calculation of RDSon the thermal model of the MOS-FET is explored. For accurate RDSon evaluation in the real time the voltage UDSon is measured during the switch-on transistor operation mode. This measurement is synchronized by PWM triggering in order to measure the average voltage value and consequently the average current during the converter sampling time period. This measurement approach is verified by real-time measurement during the operation of the DC-DC step-up converter. The program algorithm is performed on 32-bit ARM M4 MCU, STM32F407.\",\"PeriodicalId\":246203,\"journal\":{\"name\":\"2015 International Conference on Electrical Drives and Power Electronics (EDPE)\",\"volume\":\"66 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Conference on Electrical Drives and Power Electronics (EDPE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDPE.2015.7325345\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Conference on Electrical Drives and Power Electronics (EDPE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDPE.2015.7325345","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Evaluation of MOS-FET RDSon resistance for current measurement purposes in power converter's applications
This paper presents metal oxide semiconductor field effect transistor (MOS-FET) RDSon resistance evaluation in order to perform the MOS-FET current-measurement. For calculation of RDSon the thermal model of the MOS-FET is explored. For accurate RDSon evaluation in the real time the voltage UDSon is measured during the switch-on transistor operation mode. This measurement is synchronized by PWM triggering in order to measure the average voltage value and consequently the average current during the converter sampling time period. This measurement approach is verified by real-time measurement during the operation of the DC-DC step-up converter. The program algorithm is performed on 32-bit ARM M4 MCU, STM32F407.
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