低温多晶硅TFT中红外光辐照光感应电流特性评价

2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI:10.1109/AM-FPD.2016.7543654

Shuhei Kitajima, Katsuya Kito, T. Matsuda, M. Kimura, Masahide Inoue

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引用次数: 5

摘要

我们证实了n型、p型和pin型低温多晶硅晶体管在红外照射下，关断区光感应电流发生了变化。此外，我们发现光感应电流与栅极宽度成正比，而与栅极长度无关。从光感电流与暗电流的关系可以看出，探测到一定强度以上的红外光是可能的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Characteristic evaluation of photo-induced current by infrared light irradiation in low-temperature poly-Si TFT

We confirmed that photo-induced current in off region changes when we irradiate infrared light to N-type, P-type and PIN-type low-temperature poly-Si TFTs. In addition, we found that the photo-induced current is proportional to the gate width, whereas it does not depend on the gate length. We can indicate that it is possible to detect infrared light above certain intensity from the relationship between the photo-induced current and the dark current.

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2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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