10kv, 123 m/spl ω /-cm/sup 2/ 4H-SiC功率dmosfet

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC. Pub Date : 2004-06-21 DOI:10.1109/DRC.2004.1367777

S. Ryu, S. Krishnaswami, M. O'loughlin, J. Richmond, A. Agarwal, J. Palmour, A.R. Heffier

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引用次数: 20

摘要

4H-SiC功率mosfet由于其低比导通电阻和快速、温度无关的开关特性，在高压开关应用中非常有吸引力。我们展示了我们在10 kV 4H-SiC DMOSFET开发中的最新成果-展示了123 m/spl ω //spl middot/cm/sup 2/的特定导通电阻，这使特定导通电阻降低了42%。这是迄今为止报道的10kv级多数载波开关的最低通阻值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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10 kV, 123 m/spl Omega/-cm/sup 2/ 4H-SiC power DMOSFETs

Power MOSFETs in 4H-SiC are very attractive for high voltage switching applications because of their low specific on-resistances and fast, temperature independent switching characteristics. We present our latest results in 10 kV 4H-SiC DMOSFET development - a specific on-resistance of 123 m/spl Omega//spl middot/cm/sup 2/ is demonstrated, which is a 42% reduction in specific on-resistance. This is the lowest specific on-resistance value ever reported for 10 kV class majority carrier switches.

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Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.

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