用于CAD的CMOS大信号模型

IEEE MTT-S International Microwave Symposium Digest, 2003 Pub Date : 2003-06-08 DOI:10.1109/MWSYM.2003.1212455

I. Angelov, M. Fernhdal, F. Ingvarson, H. Zirath, H. Vickes

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引用次数: 19

摘要

提出了一种紧凑的高频CMOS晶体管大信号模型，并通过直流、s参数功率谱测量和负载拉力测量进行了实验评估。在100 nm CMOS场效应管(f/sub T/ = 140 GHz, f/sub max/ =100 GHz)上的测量结果与仿真结果非常吻合。由于模型参数数量少，模型方程选择细致，该模型具有良好的收敛性，这对射频电路的非线性仿真具有重要意义。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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CMOS large signal model for CAD

A compact large-signal model for high frequency CMOS transistors is proposed and experimentally evaluated with DC, S-parameter power spectrum measurements and load pull measurements. Very good correspondences between measurements on 100 nm CMOS FETs (f/sub T/ = 140 GHz, f/sub max/ =100 GHz) and simulations were achieved. Due to the low number of model parameters and the careful selection of model equations, the model exhibits excellent convergence behavior, a property important for successful nonlinear circuit simulation of RF circuits.

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IEEE MTT-S International Microwave Symposium Digest, 2003

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