SiGe量子点快闪存储器中隧道氧化物厚度对激活能的依赖性

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI:10.1109/DRC.2005.1553046

Yueran Liu, S. Tang, Decai Yu, G. Hwang, S. Banerjee

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引用次数: 0

摘要

对于非易失性存储设备来说，长时间的保持是非常重要的。与传统的连续式浮栅相比，纳米晶浮栅已被证明可以改善停留时间。在本文中，作者提出了我们的研究SiGe纳米晶闪存器件的活化能作为隧道氧化物厚度的函数，试图澄清这一问题

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Tunnel oxide thickness dependence of activation energy for SiGe quantum dot flash memory

For nonvolatile memory devices, a long retention time is very important. Nanocrystal floating gate has been demonstrated to lead to an improvement for retention time compare to conventional continuous floating gate. In this paper, the authors present our studies of activation energy for SiGe nanocrystal flash memory devices as a function of tunnel oxide thickness to try to clarify this issue

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63rd Device Research Conference Digest, 2005. DRC '05.

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