Processing and properties of arsenic trisulfide chalcogenide glasses for direct laser writing of 3D microstructures

Arsenic trisulfide (As2S3) is a transparent material from ~620 nm to 11 μm with direct applications in sensors, photonic waveguides, and acousto-optics. As2S3 may be thermally deposited to form glassy films of molecular chalcogenide (ChG) clusters. It has been shown that linear and multi-photon exposure can be used to photo-pattern thermally deposited As2S3. Photo-exposure cross-links the film into a network solid. Treating the photo-patterned material with a polarsolvent removes the unexposed material leaving behind a structure that is a negative-tone replica of the photo-pattern. In this work, nano-structure arrays were photo-patterned in As2S3 films by multi-photon direct laser writing (DLW) and the resulting structure, morphology, and chemical composition were characterized and correlated with the conditions of the thermal deposition, patterned irradiation, and etch processing. Raman spectroscopy was used to characterize the chemical structure of the unexposed and photo-exposed material, and near infrared ellipsometry was used to measure the refractive index. Physical characterization including structure size and surface adhesion of nano-scale features is related to the processing conditions.