A. Kosa, J. Benkovska, L. Stuchlíková, D. Búc, F. Dubecký, L. Harmatha
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Deep level transient spectroscopy is utilized to investigate radiation induced defects in three types of 4H-SiC Schottky diode structures by combined neutron and gamma bombardment and fast electron irradiation. Main attention is devoted to the comparison of observed spectra by non irradiated and irradiated structures in order to evaluate the radiation hardness of these structures. As a significant deep energy level the Z1/Z2 centre present in all structures is reported.
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